Name: G06P01E
Brand: Goford Semiconductor
SKU: G06P01E
Price: 0.47 USD
Availability: InStock

REF: G06P01E Goford Semiconductor

G06P01E

P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4

G06P01E is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

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In Stock: 4,959

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	28mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 4.5 V

Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	1087 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	1.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3