Name: G06N10
Brand: Goford Semiconductor
SKU: G06N10
Price: 0.50 USD
Availability: InStock

REF: G06N10 Goford Semiconductor

G06N10

N100V,RD(MAX)<240M@10V,VTH1.2V~3

G06N10 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N100V,RD(MAX)<240M@10V,VTH1.2V~3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 2,490

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	6A
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	240mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	190 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	25W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252 (DPAK)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63