G02P06 - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G02P06 Goford Semiconductor
G02P06

Goford Semiconductor

P60V,RD(MAX)<190M@-10V,RD(MAX)<2

G02P06 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P60V,RD(MAX)<190M@-10V,RD(MAX)<2. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

In Stock: 5,565

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C1.6A
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs190mOhm @ 1A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds573 pF @ 30 V
FET Feature-
Power Dissipation (Max)1.5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3

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