Name: G01N20LE
Brand: Goford Semiconductor
SKU: G01N20LE
Price: 0.50 USD
Availability: InStock

REF: G01N20LE Goford Semiconductor

G01N20LE

N200V,RD(MAX)<850M@10V,RD(MAX)<9

G01N20LE is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N200V,RD(MAX)<850M@10V,RD(MAX)<9. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

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In Stock: 3,786

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	850mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	580 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3