Name: 630AT
Brand: Goford Semiconductor
SKU: 630AT
Price: 0.95 USD
Availability: InStock

REF: 630AT Goford Semiconductor

630AT

N200V,RD(MAX)<250M@10V,RD(MAX)<3

630AT is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N200V,RD(MAX)<250M@10V,RD(MAX)<3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

Datasheet Request a Quote

In Stock: 100

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.8 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	509 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3