Name: 60N06
Brand: Goford Semiconductor
SKU: 60N06
Price: 0.78 USD
Availability: InStock

REF: 60N06 Goford Semiconductor

60N06

N60V,RD(MAX)<17M@10V,RD(MAX)<21M

60N06 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N60V,RD(MAX)<17M@10V,RD(MAX)<21M. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 2,008

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	50A
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	17mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2050 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	85W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252 (DPAK)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63