Name: 2301H
Brand: Goford Semiconductor
SKU: 2301H
Price: 0.45 USD
Availability: InStock

REF: 2301H Goford Semiconductor

2301H

P30V,RD(MAX)<130M@-4.5V,RD(MAX)<

2301H is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P30V,RD(MAX)<130M@-4.5V,RD(MAX)<. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

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In Stock: 1,002

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	125mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 2.5 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	405 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3