Name: 18N20
Brand: Goford Semiconductor
SKU: 18N20
Price: 0.94 USD
Availability: InStock

REF: 18N20 Goford Semiconductor

18N20

N 200V, RD(MAX)<0.16@10V,VTH1.0V

18N20 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N 200V, RD(MAX)<0.16@10V,VTH1.0V. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 9,032

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	18A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17.7 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	836 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	65.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63