06N06L - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: 06N06L Goford Semiconductor
06N06L

Goford Semiconductor

N60V,RD(MAX)<42M@10V,RD(MAX)<46M

06N06L is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N60V,RD(MAX)<42M@10V,RD(MAX)<46M. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

In Stock: 5,885

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C5.5A
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs42mOhm @ 3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.4 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds765 pF @ 30 V
FET Feature-
Power Dissipation (Max)960mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3L
Package / CaseTO-236-3, SC-59, SOT-23-3

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