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GP2T080A120H

In Stock: 90
GP2T080A120H - SemiQ - Transistors - FETs, MOSFETs - Single
REF: GP2T080A120H SemiQ
GP2T080A120H

SemiQ

SIC MOSFET 1200V 80M TO-247-4L

GP2T080A120H is a Transistors - FETs, MOSFETs - Single manufactured by SemiQ. SIC MOSFET 1200V 80M TO-247-4L. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-4.

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In Stock: 90

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs61 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds1377 pF @ 1000 V
FET Feature-
Power Dissipation (Max)188W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4

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