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GCMS080B120S1-E1

In Stock: 10
GCMS080B120S1-E1 - SemiQ - Transistors - FETs, MOSFETs - Single
REF: GCMS080B120S1-E1 SemiQ
GCMS080B120S1-E1

SemiQ

SIC 1200V 80M MOSFET & 10A SBD S

GCMS080B120S1-E1 is a Transistors - FETs, MOSFETs - Single manufactured by SemiQ. SIC 1200V 80M MOSFET & 10A SBD S. Key specifications: mounting type Chassis Mount, operating temperature -55°C ~ 175°C (TJ), package / case SOT-227-4, miniBLOC.

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In Stock: 10

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs58 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds1374 pF @ 1000 V
FET Feature-
Power Dissipation (Max)142W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227
Package / CaseSOT-227-4, miniBLOC

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