GA50JT06-258 - GeneSiC Semiconductor - Transistors - FETs, MOSFETs - Single
REF: GA50JT06-258 GeneSiC Semiconductor
GA50JT06-258

GeneSiC Semiconductor

TRANS SJT 600V 100A TO258

GA50JT06-258 is a Transistors - FETs, MOSFETs - Single manufactured by GeneSiC Semiconductor. TRANS SJT 600V 100A TO258. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 225°C (TJ), package / case TO-258-3, TO-258AA.

In Stock: 2,975

Specifications

17 parameters
Product StatusActive
FET Type-
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs25mOhm @ 50A
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)769W (Tc)
Operating Temperature-55°C ~ 225°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-258
Package / CaseTO-258-3, TO-258AA

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