GA20SICP12-247 - GeneSiC Semiconductor - Transistors - FETs, MOSFETs - Single
REF: GA20SICP12-247 GeneSiC Semiconductor
GA20SICP12-247

GeneSiC Semiconductor

TRANS SJT 1200V 45A TO247AB

GA20SICP12-247 is a Transistors - FETs, MOSFETs - Single manufactured by GeneSiC Semiconductor. TRANS SJT 1200V 45A TO247AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-3.

In Stock: 4,243

Specifications

17 parameters
Product StatusObsolete
FET Type-
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs50mOhm @ 20A
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds3091 pF @ 800 V
FET Feature-
Power Dissipation (Max)282W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AB
Package / CaseTO-247-3

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