Name: GA10SICP12-263
Brand: GeneSiC Semiconductor
SKU: GA10SICP12-263
Price: 29.68 USD
Availability: InStock

REF: GA10SICP12-263 GeneSiC Semiconductor

GA10SICP12-263

GeneSiC Semiconductor

TRANS SJT 1200V 25A D2PAK

GA10SICP12-263 is a Transistors - FETs, MOSFETs - Single manufactured by GeneSiC Semiconductor. TRANS SJT 1200V 25A D2PAK. Key specifications: mounting type Surface Mount, operating temperature 175°C (TJ), package / case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA.

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In Stock: 2,362

Specifications

17 parameters

Product Status	Active
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	100mOhm @ 10A
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1403 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	170W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA