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GA10JT12-263

In Stock: 7,089
GA10JT12-263 - GeneSiC Semiconductor - Transistors - FETs, MOSFETs - Single
REF: GA10JT12-263 GeneSiC Semiconductor
GA10JT12-263

GeneSiC Semiconductor

TRANS SJT 1200V 25A

GA10JT12-263 is a Transistors - FETs, MOSFETs - Single manufactured by GeneSiC Semiconductor. TRANS SJT 1200V 25A. Key specifications: mounting type Surface Mount, operating temperature 175°C (TJ).

Datasheet Request a Quote

In Stock: 7,089

Specifications

17 parameters
Product StatusActive
FET Type-
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs120mOhm @ 10A
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1403 pF @ 800 V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package-
Package / Case-

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