G3R45MT17D - GeneSiC Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G3R45MT17D GeneSiC Semiconductor
G3R45MT17D

GeneSiC Semiconductor

SIC MOSFET N-CH 61A TO247-3

G3R45MT17D is a Transistors - FETs, MOSFETs - Single manufactured by GeneSiC Semiconductor. SIC MOSFET N-CH 61A TO247-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-3.

In Stock: 209

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1700 V
Current - Continuous Drain (Id) @ 25°C61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs58mOhm @ 40A, 15V
Vgs(th) (Max) @ Id2.7V @ 8mA
Gate Charge (Qg) (Max) @ Vgs182 nC @ 15 V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds4523 pF @ 1000 V
FET Feature-
Power Dissipation (Max)438W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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