G3R30MT12J - GeneSiC Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G3R30MT12J GeneSiC Semiconductor
G3R30MT12J

GeneSiC Semiconductor

SIC MOSFET N-CH 96A TO263-7

G3R30MT12J is a Transistors - FETs, MOSFETs - Single manufactured by GeneSiC Semiconductor. SIC MOSFET N-CH 96A TO263-7. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA.

In Stock: 917

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs36mOhm @ 50A, 15V
Vgs(th) (Max) @ Id2.69V @ 12mA
Gate Charge (Qg) (Max) @ Vgs155 nC @ 15 V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds3901 pF @ 800 V
FET Feature-
Power Dissipation (Max)459W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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