G3R20MT12N - GeneSiC Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G3R20MT12N GeneSiC Semiconductor
G3R20MT12N

GeneSiC Semiconductor

SIC MOSFET N-CH 105A SOT227

G3R20MT12N is a Transistors - FETs, MOSFETs - Single manufactured by GeneSiC Semiconductor. SIC MOSFET N-CH 105A SOT227. Key specifications: mounting type Chassis Mount, operating temperature -55°C ~ 175°C (TJ), package / case SOT-227-4, miniBLOC.

In Stock: 271

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs24mOhm @ 60A, 15V
Vgs(th) (Max) @ Id2.69V @ 15mA
Gate Charge (Qg) (Max) @ Vgs219 nC @ 15 V
Vgs (Max)+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds5873 pF @ 800 V
FET Feature-
Power Dissipation (Max)365W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227
Package / CaseSOT-227-4, miniBLOC

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