G3R20MT12K - GeneSiC Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G3R20MT12K GeneSiC Semiconductor
G3R20MT12K

GeneSiC Semiconductor

SIC MOSFET N-CH 128A TO247-4

G3R20MT12K is a Transistors - FETs, MOSFETs - Single manufactured by GeneSiC Semiconductor. SIC MOSFET N-CH 128A TO247-4. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-4.

In Stock: 463

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C128A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs24mOhm @ 60A, 15V
Vgs(th) (Max) @ Id2.69V @ 15mA
Gate Charge (Qg) (Max) @ Vgs219 nC @ 15 V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds5873 pF @ 800 V
FET Feature-
Power Dissipation (Max)542W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4

Need a Quote for G3R20MT12K?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →