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G3R12MT12K

In Stock: 274
G3R12MT12K - GeneSiC Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G3R12MT12K GeneSiC Semiconductor
G3R12MT12K

GeneSiC Semiconductor

1200V 12M TO-247-4 G3R SIC MOSFE

G3R12MT12K is a Transistors - FETs, MOSFETs - Single manufactured by GeneSiC Semiconductor. 1200V 12M TO-247-4 G3R SIC MOSFE. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-4.

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In Stock: 274

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C157A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs13mOhm @ 100A, 18V
Vgs(th) (Max) @ Id2.7V @ 50mA
Gate Charge (Qg) (Max) @ Vgs288 nC @ 15 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds9335 pF @ 800 V
FET Feature-
Power Dissipation (Max)567W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4

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