G2R50MT33K - GeneSiC Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G2R50MT33K GeneSiC Semiconductor
G2R50MT33K

GeneSiC Semiconductor

3300V 50M TO-247-4 SIC MOSFET

G2R50MT33K is a Transistors - FETs, MOSFETs - Single manufactured by GeneSiC Semiconductor. 3300V 50M TO-247-4 SIC MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-4.

In Stock: 4,151

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)3300 V
Current - Continuous Drain (Id) @ 25°C63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id3.5V @ 10mA (Typ)
Gate Charge (Qg) (Max) @ Vgs340 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds7301 pF @ 1000 V
FET FeatureStandard
Power Dissipation (Max)536W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4

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