Name: G2R120MT33J
Brand: GeneSiC Semiconductor
SKU: G2R120MT33J
Price: 114.52 USD
Availability: InStock

REF: G2R120MT33J GeneSiC Semiconductor

G2R120MT33J

GeneSiC Semiconductor

SIC MOSFET N-CH TO263-7

G2R120MT33J is a Transistors - FETs, MOSFETs - Single manufactured by GeneSiC Semiconductor. SIC MOSFET N-CH TO263-7. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA.

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In Stock: 265

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	3300 V
Current - Continuous Drain (Id) @ 25°C	35A
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	156mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	145 nC @ 20 V

Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3706 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA