Name: G2R1000MT33J
Brand: GeneSiC Semiconductor
SKU: G2R1000MT33J
Price: 19.82 USD
Availability: InStock

REF: G2R1000MT33J GeneSiC Semiconductor

G2R1000MT33J

GeneSiC Semiconductor

SIC MOSFET N-CH 4A TO263-7

G2R1000MT33J is a Transistors - FETs, MOSFETs - Single manufactured by GeneSiC Semiconductor. SIC MOSFET N-CH 4A TO263-7. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA.

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In Stock: 3,048

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	3300 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id	3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 20 V

Vgs (Max)	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds	238 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	74W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA