GPI65030DFN - GaNPower - Transistors - FETs, MOSFETs - Single
REF: GPI65030DFN GaNPower
GPI65030DFN

GaNPower

GANFET N-CH 650V 30A DFN8X8

GPI65030DFN is a Transistors - FETs, MOSFETs - Single manufactured by GaNPower. GANFET N-CH 650V 30A DFN8X8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case Die.

In Stock: 163

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C30A
Drive Voltage (Max Rds On, Min Rds On)6V
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id1.2V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs5.8 nC @ 6 V
Vgs (Max)+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds241 pF @ 400 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

Need a Quote for GPI65030DFN?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →