Name: RFD8P06LE
Brand: Fairchild Semiconductor
SKU: RFD8P06LE
Price: 0.30 USD
Availability: InStock

REF: RFD8P06LE Fairchild Semiconductor

RFD8P06LE

P-CHANNEL POWER MOSFET

RFD8P06LE is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. P-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

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In Stock: 7,200

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 5V
Rds On (Max) @ Id, Vgs	300mOhm @ 8A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V

Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	675 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	48W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA