IRLI610ATU - Fairchild Semiconductor - Transistors - FETs, MOSFETs - Single
REF: IRLI610ATU Fairchild Semiconductor
IRLI610ATU

Fairchild Semiconductor

MOSFET N-CH 200V 3.3A I2PAK

IRLI610ATU is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. MOSFET N-CH 200V 3.3A I2PAK. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

In Stock: 3,000

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs1.5Ohm @ 1.65A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds240 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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