Name: IRFS610BFP001
Brand: Fairchild Semiconductor
SKU: IRFS610BFP001
Availability: InStock

REF: IRFS610BFP001 Fairchild Semiconductor

IRFS610BFP001

POWER FIELD-EFFECT TRANSISTOR, N

IRFS610BFP001 is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. POWER FIELD-EFFECT TRANSISTOR, N. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

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In Stock: 3,747

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	3.3A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.65A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	22W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F
Package / Case	TO-220-3 Full Pack