HUF76113T3ST - Fairchild Semiconductor - Transistors - FETs, MOSFETs - Single
REF: HUF76113T3ST Fairchild Semiconductor
HUF76113T3ST

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

HUF76113T3ST is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. N-CHANNEL POWER MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

In Stock: 34,318

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs31mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds625 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223-4
Package / CaseTO-261-4, TO-261AA

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