FQU3N50CTU - Fairchild Semiconductor - Transistors - FETs, MOSFETs - Single
REF: FQU3N50CTU Fairchild Semiconductor
FQU3N50CTU

Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 2

FQU3N50CTU is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. POWER FIELD-EFFECT TRANSISTOR, 2. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

In Stock: 1,320

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds365 pF @ 25 V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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