FQPF20N06 - Fairchild Semiconductor - Transistors - FETs, MOSFETs - Single
REF: FQPF20N06 Fairchild Semiconductor
FQPF20N06

Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 1

FQPF20N06 is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. POWER FIELD-EFFECT TRANSISTOR, 1. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3 Full Pack.

In Stock: 1,124

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds590 pF @ 25 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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