Name: FQI4N20
Brand: Fairchild Semiconductor
SKU: FQI4N20
Availability: InStock

REF: FQI4N20 Fairchild Semiconductor

FQI4N20

N-CHANNEL POWER MOSFET

FQI4N20 is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

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In Stock: 8,983

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.5 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	220 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.13W (Ta), 45W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA