FQI2N80TU - Fairchild Semiconductor - Transistors - FETs, MOSFETs - Single
REF: FQI2N80TU Fairchild Semiconductor
FQI2N80TU

Fairchild Semiconductor

MOSFET N-CH 800V 2.4A I2PAK

FQI2N80TU is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. MOSFET N-CH 800V 2.4A I2PAK. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

In Stock: 1,748

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds550 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 85W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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