FQE10N20CTU - Fairchild Semiconductor - Transistors - FETs, MOSFETs - Single
REF: FQE10N20CTU Fairchild Semiconductor
FQE10N20CTU

Fairchild Semiconductor

MOSFET N-CH 200V 4A TO126-3

FQE10N20CTU is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. MOSFET N-CH 200V 4A TO126-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-225AA, TO-126-3.

In Stock: 21,919

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds510 pF @ 25 V
FET Feature-
Power Dissipation (Max)12.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-126-3
Package / CaseTO-225AA, TO-126-3

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