FQAF10N80 - Fairchild Semiconductor - Transistors - FETs, MOSFETs - Single
REF: FQAF10N80 Fairchild Semiconductor
FQAF10N80

Fairchild Semiconductor

MOSFET N-CH 800V 6.7A TO3PF

FQAF10N80 is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. MOSFET N-CH 800V 6.7A TO3PF. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-3P-3 Full Pack.

In Stock: 7,549

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.05Ohm @ 3.35A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs71 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 25 V
FET Feature-
Power Dissipation (Max)113W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PF
Package / CaseTO-3P-3 Full Pack

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