FDN363N - Fairchild Semiconductor - Transistors - FETs, MOSFETs - Single
REF: FDN363N Fairchild Semiconductor
FDN363N

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

FDN363N is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. N-CHANNEL POWER MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

In Stock: 58,788

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs240mOhm @ 1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.2 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V
FET Feature-
Power Dissipation (Max)500mW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT™-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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