FDFME2P823ZT - Fairchild Semiconductor - Transistors - FETs, MOSFETs - Single
REF: FDFME2P823ZT Fairchild Semiconductor
FDFME2P823ZT

Fairchild Semiconductor

2.6A, 20V, P-CHANNEL MOSFET

FDFME2P823ZT is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. 2.6A, 20V, P-CHANNEL MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UFDFN Exposed Pad.

In Stock: 40,000

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs142mOhm @ 2.3A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.7 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds405 pF @ 10 V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.4W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-MicroFET (1.6x1.6)
Package / Case6-UFDFN Exposed Pad

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