Name: FDD3680
Brand: Fairchild Semiconductor
SKU: FDD3680
Availability: InStock

REF: FDD3680 Fairchild Semiconductor

FDD3680

POWER FIELD-EFFECT TRANSISTOR, 2

FDD3680 is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. POWER FIELD-EFFECT TRANSISTOR, 2. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

Datasheet Request a Quote

In Stock: 9,916

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	46mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	53 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1735 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	68W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63