FDD2612 - Fairchild Semiconductor - Transistors - FETs, MOSFETs - Single
REF: FDD2612 Fairchild Semiconductor
FDD2612

Fairchild Semiconductor

MOSFET N-CH 200V 4.9A TO252

FDD2612 is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. MOSFET N-CH 200V 4.9A TO252. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 2,261

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs720mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds234 pF @ 100 V
FET Feature-
Power Dissipation (Max)42W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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