Name: FCP125N60E
Brand: Fairchild Semiconductor
SKU: FCP125N60E
Availability: InStock

REF: FCP125N60E Fairchild Semiconductor

FCP125N60E

POWER FIELD-EFFECT TRANSISTOR, N

FCP125N60E is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. POWER FIELD-EFFECT TRANSISTOR, N. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 1,754

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	125mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2990 pF @ 380 V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3