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FCH041N65EFL4

In Stock: 232
FCH041N65EFL4 - Fairchild Semiconductor - Transistors - FETs, MOSFETs - Single
REF: FCH041N65EFL4 Fairchild Semiconductor
FCH041N65EFL4

Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR, N

FCH041N65EFL4 is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. POWER FIELD-EFFECT TRANSISTOR, N. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-4.

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In Stock: 232

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs41mOhm @ 38A, 10V
Vgs(th) (Max) @ Id5V @ 7.6mA
Gate Charge (Qg) (Max) @ Vgs298 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12560 pF @ 100 V
FET Feature-
Power Dissipation (Max)595W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-4

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