EPC2021ENGR - EPC - Transistors - FETs, MOSFETs - Single
REF: EPC2021ENGR EPC
EPC2021ENGR

EPC

TRANS GAN 80V 60A BUMPED DIE

EPC2021ENGR is a Transistors - FETs, MOSFETs - Single manufactured by EPC. TRANS GAN 80V 60A BUMPED DIE. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case Die.

In Stock: 7,260

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs2.5mOhm @ 29A, 5V
Vgs(th) (Max) @ Id2.5V @ 14mA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 5 V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 40 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

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