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EPC2019

In Stock: 63,673
EPC2019 - EPC - Transistors - FETs, MOSFETs - Single
REF: EPC2019 EPC
EPC2019

EPC

GANFET N-CH 200V 8.5A DIE

EPC2019 is a Transistors - FETs, MOSFETs - Single manufactured by EPC. GANFET N-CH 200V 8.5A DIE. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case Die.

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In Stock: 63,673

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs42mOhm @ 7A, 5V
Vgs(th) (Max) @ Id2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs2.9 nC @ 5 V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds288 pF @ 100 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

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