Name: EPC2012C
Brand: EPC
SKU: EPC2012C
Price: 2.89 USD
Availability: InStock

REF: EPC2012C EPC

EPC2012C

GANFET N-CH 200V 5A DIE OUTLINE

EPC2012C is a Transistors - FETs, MOSFETs - Single manufactured by EPC. GANFET N-CH 200V 5A DIE OUTLINE. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case Die.

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In Stock: 40,510

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	1.3 nC @ 5 V

Vgs (Max)	+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die Outline (4-Solder Bar)
Package / Case	Die