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EPC2012

In Stock: 1,336
EPC2012 - EPC - Transistors - FETs, MOSFETs - Single
REF: EPC2012 EPC
EPC2012

EPC

GANFET N-CH 200V 3A DIE

EPC2012 is a Transistors - FETs, MOSFETs - Single manufactured by EPC. GANFET N-CH 200V 3A DIE. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 125°C (TJ), package / case Die.

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In Stock: 1,336

Specifications

17 parameters
Product StatusDiscontinued at Digi-Key
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs1.8 nC @ 5 V
Vgs (Max)+6V, -5V
Input Capacitance (Ciss) (Max) @ Vds145 pF @ 100 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

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