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EPC2010

In Stock: 7,355
EPC2010 - EPC - Transistors - FETs, MOSFETs - Single
REF: EPC2010 EPC
EPC2010

EPC

GANFET N-CH 200V 12A DIE

EPC2010 is a Transistors - FETs, MOSFETs - Single manufactured by EPC. GANFET N-CH 200V 12A DIE. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 125°C (TJ), package / case Die.

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In Stock: 7,355

Specifications

17 parameters
Product StatusDiscontinued at Digi-Key
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 5 V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds540 pF @ 100 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

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