FBG04N30BC - EPC Space, LLC - Transistors - FETs, MOSFETs - Single
REF: FBG04N30BC EPC Space, LLC
FBG04N30BC

EPC Space, LLC

GAN FET HEMT 40V30A COTS 4FSMD-B

FBG04N30BC is a Transistors - FETs, MOSFETs - Single manufactured by EPC Space, LLC. GAN FET HEMT 40V30A COTS 4FSMD-B. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-SMD, No Lead.

In Stock: 62

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs11.4 nC @ 5 V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 20 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-SMD
Package / Case4-SMD, No Lead

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