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MMBTH10Q-7-F

In Stock: 9,821
MMBTH10Q-7-F - Diodes Incorporated - Transistors - Bipolar (BJT) - RF
REF: MMBTH10Q-7-F Diodes Incorporated
MMBTH10Q-7-F

Diodes Incorporated

RF TRANSISTOR SOT23

MMBTH10Q-7-F is a Transistors - Bipolar (BJT) - RF manufactured by Diodes Incorporated. RF TRANSISTOR SOT23. Key specifications: mounting type Surface Mount, operating temperature -65°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 50mA.

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In Stock: 9,821

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25V
Frequency - Transition650MHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max310mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA, 10V
Current - Collector (Ic) (Max)50mA
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

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