NESG2101M05-A - CEL - Transistors - Bipolar (BJT) - RF
REF: NESG2101M05-A CEL
NESG2101M05-A

CEL

RF TRANS NPN 5V 17GHZ M05

NESG2101M05-A is a Transistors - Bipolar (BJT) - RF manufactured by CEL. RF TRANS NPN 5V 17GHZ M05. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-343F, current - collector (ic) (max) 100mA.

In Stock: 8,849

Specifications

13 parameters
Product StatusDiscontinued at Digi-Key
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5V
Frequency - Transition17GHz
Noise Figure (dB Typ @ f)0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
Gain11dB ~ 19dB
Power - Max500mW
DC Current Gain (hFE) (Min) @ Ic, Vce130 @ 15mA, 2V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-343F
Supplier Device PackageM05

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