RFQ List My Parts 0
Get a Quote Contact

NE851M13-T3-A

In Stock: 8,076
NE851M13-T3-A - CEL - Transistors - Bipolar (BJT) - RF
REF: NE851M13-T3-A CEL
NE851M13-T3-A

CEL

TRANS NPN LOW PRO M13 SMD

NE851M13-T3-A is a Transistors - Bipolar (BJT) - RF manufactured by CEL. TRANS NPN LOW PRO M13 SMD. Key specifications: mounting type Surface Mount, package / case SOT-3, current - collector (ic) (max) 100mA, power - max 140mW.

Datasheet Request a Quote

In Stock: 8,076

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5.5V
Frequency - Transition4.5GHz
Noise Figure (dB Typ @ f)1.9dB ~ 2.5dB @ 2GHz
Gain4dB ~ 5.5dB @ 2GHZ
Power - Max140mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 1V
Current - Collector (Ic) (Max)100mA
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseSOT-3
Supplier Device PackageM13

Related Products

MMBTH10LT1 - onsemi onsemi MMBTH10LT1 0.04000 RFQ MCH4021-TL-E - onsemi onsemi MCH4021-TL-E 0.12000 RFQ 2SC5750-T1-A - Renesas Electronics America Inc Renesas Electronics America Inc 2SC5750-T1-A 0.29000 RFQ 2SC6023-TR-E - onsemi onsemi 2SC6023-TR-E 0.06000 RFQ FH102A-TR-E - onsemi onsemi FH102A-TR-E 0.29000 RFQ BFU660F,115 - NXP USA Inc. NXP USA Inc. BFU660F,115 0.67000 RFQ

Manufacturers in Transistors - Bipolar (BJT) - RF

NXP USA Inc. Panjit International Inc. Micro Commercial Co Broadcom Limited Toshiba Semiconductor and Storage Central Semiconductor Corp NTE Electronics, Inc MACOM Technology Solutions Solid State Inc. Renesas Sanyo

Need a Quote for NE851M13-T3-A?

Submit your RFQ and get a quote within 24 hours.

Submit RFQ View All Transistors - Bipolar (BJT) - RF
Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →