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MX0912B351Y

In Stock: 6,350
MX0912B351Y - Ampleon USA Inc. - Transistors - Bipolar (BJT) - RF
REF: MX0912B351Y Ampleon USA Inc.
MX0912B351Y

Ampleon USA Inc.

RF POWER BIPOLAR TRANSISTOR, 1-E

MX0912B351Y is a Transistors - Bipolar (BJT) - RF manufactured by Ampleon USA Inc.. RF POWER BIPOLAR TRANSISTOR, 1-E. Key specifications: mounting type Chassis Mount, operating temperature 200°C (TJ), package / case SOT-439A, current - collector (ic) (max) 21A.

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In Stock: 6,350

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Frequency - Transition1.215GHz
Noise Figure (dB Typ @ f)-
Gain8dB
Power - Max960W
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)21A
Operating Temperature200°C (TJ)
Mounting TypeChassis Mount
Package / CaseSOT-439A
Supplier Device PackageCDFM2

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